Mapping Professional Development for Jewish Educators

Describes the desirable and necessary characteristics of effective professional development in Jewish education, the various opportunities and approaches available to Jewish educators, and possibilities for future expansion and improvement

Culture Change in Nursing Homes: How Far Have We Come?

Presents findings from the Commonwealth Fund 2007 National Survey of Nursing Homes on the extent to which nursing homes have adopted the principles of culture change and are delivering resident-centered care, as well as the benefits the changes have brou

A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction

Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 μm cavity length are obtained. A single longitudinal mode at 1.3 μm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices

Guest editors' introduction: special section on fault diagnosis and tolerance in cryptography

The objective of this special section is to present some of the state-of-the-art developments in the analysis of fault attacks and the techniques to protect crypto-systems from such attacks

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions

Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained